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Radiation Effects on Emerging Electronic
Materials and Devices
Ron Schrimpf
Vanderbilt University
Institute for Space and Defense Electronics
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Team Members
Vanderbilt University
Electrical Engineering: Dan Fleetwood, Marcus Mendenhall, Lloyd
Massengill, Robert Reed, Ron Schrimpf, Bob Weller
Physics: Len Feldman, Sok Pantelides
Arizona State University
Electrical Engineering: Hugh Barnaby
University of Florida
Electrical and Computer Engineering: Mark Law, Scott Thompson
Georgia Tech
Electrical and Computer Engineering: John Cressler North Carolina State University
Physics: Gerry Lucovsky
Rutgers University
Chemistry: Eric Garfunkel, Evgeni Gusev
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Institute for Space and Defense
Electronics
Resource to support national requirements in radiationeffects analysis and rad-hard design
Bring academic resources/expertise and real-worldengineering to bear on system-driven needs
ISDE provides:
Government and industry radiation-effects resource Modeling and simulation
Design support: rad models, hardening by design
Technology support: assessment, characterization
Flexible staffing driven by project needs Faculty
Graduate students
Professional, non-tenured engineering staff
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Radiation Effects on Emerging
Electronic Materials and Devices
More changes in IC technology and materials
in past five years than previous forty years
SiGe, SOI, strained Si, alternative dielectrics, new
metallization systems, ultra-small devices Future space and defense systems require
understanding radiation effects in advanced
technologies
Changes in device geometry and materials affectenergy deposition, charge collection, circuit upset,
parametric degradation
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Approach
Experimental analysis of radiation responseof devices and materials fabricated inuniversity labs and by industrial partners
First-principles quantum mechanical analysisof radiation-induced defects physicallybased engineering models
Development and application of afundamentally new multi-scale simulationapproach
Validation of simulation throughexperiments
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Virtual Irradiation
Fundamentally new approach for simulating radiationeffects
Applicable to all tasks
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Physically Based Simulation of
Radiation Events
High energy protons incident on advanced CMOS integrated
circuit
Interaction with metallization layers dramatically increases
energy deposition
Device Description Radiation Events
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Hierarchical Multi-Scale
Analysis of Radiation Effects
Materials
Device Structure
Device Simulation Circuit Response
IC DesignEnergy
Deposition
Defect Models
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Current Joint Program of ISDE/VU and CFDRC
Geant4- accurate model
of radiation event
3D device simulation
n
e-
Blue =
+ ions
p
Improved Understanding of Space Radiation Effectsin Exploration Electronics by Advanced Modeling ofNanoscale Devices and Novel Materials
STTR Phase I Project, sponsored by NASA Ames(2005):Program Objectives:
Couple Vanderbilt Geant4and CFDRC NanoTCAD 3D Device Solver
Adaptive/dynamic 3D meshing for multiple ion tracks
Statistically meaningful runs on a massivelyparallel computing cluster
Integrated and automated interface ofGeant4 and CFDRC NanoTCAD
0.13um NMOS, Vd = 1.2 V , Vg = 0V
Two different ion strikes
Psub Contact / No-Contact
0.E+00
2.E-04
4.E-04
6.E-04
8.E-04
1.E-03
1. E-12 1. E-11 1. E-10 1. E-09 1. E-08 1. E-07 1. E-06
Time (s)
Drain
Current
(A)
. .. . -
-
- Adaptive
3D meshing - 3D Nanoscale transport- Physics based
transient response
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Research Plan
Tasks defined and scheduled
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Organization by Task
Radiation response of new materials
NCSU, Rutgers, Vanderbilt
Impact of new device technologies on radiation
response
ASU, Florida, Georgia Tech, Vanderbilt
Single-event effects in new technologies and ultra-
small devices
Florida, Georgia Tech, Vanderbilt
Displacement-damage and total-dose effects in ultra-small devices
ASU, Vanderbilt
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Radiation Response of New
Materials
HfO2-based dielectrics and emerging high-k materials Metal gates
Interface engineering (thickness & composition)
Hydrogen and nitrogen at SiON interfaces (NBTI)
Substrate engineering (strained Si, Si orientations,Si/SiGe, SOI)
Defects in nanoscale devices
Energy deposition via Radsafe/MRED
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Impact of new device technologies
on radiation response
SiGe HBTs Strained Si CMOS
Ultra-small bulk CMOS
Mobility in ultra-thin film SOI MOSFETs
TID response in scaled SOI CMOS Multiple gate/FinFET devices
Multi-scale hierarchical analysis of single-eventeffects
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Single-event effects in new technologies
and ultra-small devices
Development/application of integrated simulation toolsuite Applications in all tasks
Effects of passivation/metallization on SEE
Tensor-dependent transport for SEE
Extreme event analysis Spatial and energy distribution of e-h pairs
Energy deposition in small device volumes
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Displacement-damage and total-
dose effects in ultra-small devices
Physical models of displacement single events Microdose/displacement SEE in SiGe and CMOS devices
Single-transistor defect characterization
Link energy deposition to defects through DFT moleculardynamics
Multiple-device displacement events Dielectric leakage/rupture
0
2
4
6
8
10
0 5 10 15 20Film Thickness (nm)
VBD(V
)
Data From Sexton at al. 1998
2.2 nm
SiO2
5.4 nm
(Physical)
Al2O3
3.3 nm
SiO2(15%N)
3.3 nm
SiO2
SiO2
2.6 nm
(Equiv.
Oxide
Thick. )
Al2O3
VDD from National Technology Roadmaps
'97
'09
'03'01
'06
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Collaborators
IBM SiGe, CMOS, metal gate,
high-k
Intel
Strained Si and Ge
channels, tri-gate, high-k,
metal gate
Texas Instruments
CMOS
Freescale
BiCMOS and SOI Jazz
SiGe
National
SiGe
SRC/Sematech CMOS, metal gate, high-k,
FinFETs
Sandia Labs
Alternative dielectrics,
thermally stimulated current NASA/DTRA
Radiation-effects testing
Oak Ridge National
Laboratory
Atomic-scale imaging
CFDRC
Software development
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